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IXFH 30N60Q
IXFT 30N60Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
g fs
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
14
22
S
C iss
C oss
C rss
V GS = 0 V, V DS = 25 V, f = 1 MHz
4700
580
230
pF
pF
pF
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
t d(on)
30
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
32
ns
t d(off)
R G = 2.0 ? (External),
80
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
t f
Q g(on)
Q gs
Q gd
R thJC
R thCK
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-247
16
125
28
76
0.25
0.25
ns
nC
nC
nC
K/W
K/W
A
A 1
A 2
b
b 1
b 2
C
D
E
e
L
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
5.3
2.54
2.6
1.4
2.13
3.12
.8
21.46
16.26
5.72
20.32
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205
.780
.209
.102
.098
.055
.084
.123
.031
.845
.640
0.225
.800
L1
4.50
.177
? P
Q
R
S
3.55
5.89
4.32
6.15
3.65
6.40
5.49
BSC
.140
0.232
.170
242
.144
0.252
.216
BSC
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-268 Outline
I S
I SM
V SD
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
26
104
1.5
A
A
V
t rr
Q RM
I RM
I F = I S -di/dt = 100 A/ μ s, V R = 100 V
1
10
250
ns
μ C
A
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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